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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D099
BLV861 UHF linear push-pull power transistor
Product specification Supersedes data of 1998 Jan 14 1998 Jan 16
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
FEATURES * Double stage internal input and output matching networks for an optimum wideband capability and high gain * Polysilicon emitter ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability. APPLICATIONS * Common emitter class-AB output stages of television transmitter amplifiers (sound and vision) operating in bands 4 and 5 (470 to 860 MHz). DESCRIPTION NPN silicon planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a SOT289A 4-lead rectangular flange package, with a ceramic cap. PINNING PIN 1 2 3 4 5 Notes SYMBOL c1 c2 b1 b2 e
BLV861
DESCRIPTION collector 1; note 1 collector 2; note 1 base 1 base 2 common emitters; note 2
1. Collectors c1 and c2 are internally connected. 2. Common emitters are connected to the flange.
handbook, halfpage
c1
1
2
b1 e
5 3
Top view
b2
4
MAM374
c2
Fig.1 Simplified outline (SOT289A) and symbol.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter push-pull test circuit. MODE OF OPERATION CW class-AB f (MHz) 860 VCE (V) 28 PL (W) 100 Gp (dB) 8.5 C (%) 55 Gp (dB) 1
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1998 Jan 16
2
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Tmb = 25 C CONDITIONS open emitter open base open collector - - - - - -65 - MIN.
BLV861
MAX. 65 30 3 15 220 +150 200 V V V A
UNIT
W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. Thermal resistance is determined under specified RF operating conditions. PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Ptot = 220 W; note 1 VALUE 0.8 0.2 UNIT K/W K/W
102 handbook, halfpage
MGK766
IC (A)
10
(2)
(1)
1
1
10
VCE (V)
102
Total device; both sections equally loaded. (1) Tmb = 25 C. (2) Th = 70 C.
Fig.2 DC SOAR.
1998 Jan 16
3
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
CHARACTERISTICS Values apply to either transistor section; Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE hFE Cc Note 1. The value of Cc is that of the die only; it is not measurable because of the internal matching network. APPLICATION INFORMATION RF performance at Th = 25 C in a common emitter push-pull class-AB test circuit. MODE OF OPERATION CW class-AB f (MHz) 860 VCE (V) 28 ICQ (A) 0.1 PL (W) 100 Gp (dB) 8.5 C (%) 55 PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain DC current gain ratio of both sections collector capacitance CONDITIONS IE = 0; IC = 35 mA IB = 0; IC = 90 mA IE = 2 mA; IC = 0 VCB = 28 V IC = 2.8 A; VCE = 10 V IC = 4.5 A; VCE = 10 V IE = ie= 0; VCE = 28 V; f = 1 MHz; note 1 MIN. 65 30 3 - 30 0.67 - - - - - - - 47 TYP.
BLV861
MAX. - - - 3 120 1.5 -
UNIT V V V mA - - pF
Gp (dB) 1
Ruggedness in class-AB operation The BLV861 is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the conditions: Th = 25 C; f = 860 MHz; VCE = 28 V; ICQ = 0.1 A; PL = 100 W; Rth mb-h = 0.2 K/W.
1998 Jan 16
4
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV861
handbook, halfpage
16
MGK768
80 C (%) 60
handbook, halfpage
150
MGK769
Gp (dB) 12 Gp
C
PL (W) 100
8
40
50 4 20
0 0 40 80 120 PL (W)
0 160
0 0 10 20 PD (W) 30
Th = 25 C; f = 860 MHz; VCE = 28 V; ICQ = 0.1 A.
Th = 25 C; f = 860 MHz; VCE = 28 V; ICQ = 0.1 A.
Fig.3
Power gain and collector efficiency as functions of load power; typical values.
Fig.4
Load power as a function of drive power; typical values.
handbook, halfpage
-20
MGK770
handbook, halfpage
-20
MGK771
dim (dB) -30
dim (dB) -30
-40
d3 d5
-40
-50
-50
-60
0
100
200
300 400 Po sync (dB)
-60
0
50
100
150
200 250 Po sync (W)
Th = 25 C; VCE = 28 V; ICQ = 0.1 A; 2-tone: fvision = 855.25 MHz (-8 dB); fsideband = 859.68 MHz (-16 dB).
Th = 25 C; VCE = 28 V; ICQ = 0.1 A; 3-tone: fvision = 855.25 MHz (-8 dB); fsideband = 859.68 MHz (-16 dB); fsound = 860.75 MHz (-10 dB).
Fig.5
Intermodulation distortion as a function of output power; typical values.
Fig.6
Intermodulation distortion as a function of output power; typical values.
1998 Jan 16
5
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV861
handbook, full pagewidth
Vbias
R4
TR3 P1 R5
VCE = 28 V
R3 TR2 C14
C15
50 input Vbias
C1
R1 R2
,,, ,,, ,,,, ,,, ,,,, ,,,,, ,,,,
L4 TR1 L2 L6 L8 B1 C5 C6 C7 C8 C9 B2 L1 L3 L7 L5
VCE = 28 V 50 output
C13
C2
C3
C4
C10
C11
C12
MGK775
Fig.7 Class-AB test circuit at 860 MHz.
1998 Jan 16
6
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV861
handbook, full pagewidth
140
70
R3 R4 R5 C14 P1 C15
VCE TR3 X2
X1 B1 50 input C1 C2 R1 R2 C3 C5
TR2
C8 C6 C7 C9
C11 C12
50 output C13
B2 TR1 C4 C10
MGK776
Dimensions in mm. The components are situated on one side of the copper-clad PTFE-glass board (TLX8) from Taconic, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Printed-circuit board and component layout for the 860 MHz class-AB test circuit.
1998 Jan 16
7
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
List of components COMPONENT C1, C13 C2, C11, C15 C3, C12 C4, C10 C5 C6 C7 C8 C9 C14 L1, L8 L2, L3 L4, L5 L6, L7 B1 B2 R1, R2, R4 R3 R5 P1 X1, X2 TR1 TR2, TR3 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. American Technical Ceramics type 180R or capacitor of same quality. DESCRIPTION multilayer ceramic chip capacitor multilayer ceramic chip capacitor solid aluminium capacitor multilayer ceramic chip capacitor + Tekelek trimmer; note 2 VALUE 15 nF 100 nF 100 F; 40 V 10 pF; 0.6 to 4.5 pF
BLV861
DIMENSIONS CATALOGUE No. 0805 1206 2222 590 16629 2222 581 16641 2222 031 37101
multilayer ceramic chip capacitor; note 1 15 pF
multilayer ceramic chip capacitor; note 2 8.2 pF
multilayer ceramic chip capacitor; note 3 10 pF multilayer ceramic chip capacitor; note 3 2.7 pF multilayer ceramic chip capacitor; note 2 3 pF multilayer ceramic chip capacitor; note 1 100 nF stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 semi rigid coax balun UT70-25 semi rigid coax balun UT70-25 SMD resistor SMD resistor SMD resistor potentiometer copper ribbon hairpin NPN push-pull RF transistor BLV861 NPN transistor BD139 9340 542 40112 9330 912 20112 46 x 1.8 mm 20 x 5 mm 10 x 10 mm 21 x 5 mm Z = 25 1.5 46 mm Z = 25 1.5 46 mm 1 47 1.2 k 4.7 k 0805 0805 0805 2122 118 04562 2122 118 04598 2122 118 04579
4. The striplines are on a double copper-clad printed-circuit board: PTFE-glass material (TLX8) from Taconic (r = 2.55); thickness 0.5 mm.
1998 Jan 16
8
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV861
handbook, halfpage
5
MGK772
Zi ()
handbook, halfpage
8 6
MGK773
ZL ()
4 4 3 ri 2 0 -2 1 xi 0 400 -4 -6 400 RL
2
XL
500
600
700
800 900 f (MHz)
500
600
700
800 900 f (MHz)
Th = 25 C; VCE = 28 V; ICQ = 0.1 A; PL = 100 W (total device).
Th = 25 C; VCE = 28 V; ICQ = 0.1 A; PL = 100 W (total device).
Fig.9
Input impedance (per section) as a function of frequency (series components); typical values.
Fig.10 Load impedance (per section) as a function of frequency (series components); typical values.
handbook, halfpage G
12 p (dB) 10
MGK774
C
60 C (%) 50
8
Gp
40
6
30
handbook, halfpage
4
20
Zi
2
10
ZL
MBA451
0 400
500
600
700
0 800 900 f (MHz)
Th = 25 C; VCE = 28 V; ICQ = 0.1 A; PL = 100 W (total device).
Fig.11 Power gain and collector efficiency as functions of frequency; typical values.
Fig.12 Definition of transistor impedance.
1998 Jan 16
9
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLV861
SOT289A
D
A F
5
U1 q H1 w2 M C C
B
c
1
2
H
U2
p
E
w1 M A B
A
3
b e
4
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.65 3.92 0.183 0.154 b 3.33 3.07 c 0.10 0.05 D 13.10 12.90 0.516 0.508 E 11.53 11.33 e 4.60 F 1.65 1.40 H 19.81 19.05 H1 4.85 4.34 p 3.43 3.17 Q 2.31 2.06 q 21.44 U1 28.07 27.81 1.105 1.095 U2 11.81 11.56 0.465 0.455 w1 0.51 0.02 w2 1.02 0.04 w3 0.25 0.01
0.131 0.004 0.121 0.002
0.454 0.181 0.446
0.065 0.780 0.055 0.750
0.191 0.135 0.171 0.125
0.091 0.844 0.081
OUTLINE VERSION SOT289A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
1998 Jan 16
10
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV861
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Jan 16
11
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
Internet: http://www.semiconductors.philips.com
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127047/00/05/pp12
Date of release: 1998 Jan 16
Document order number:
9397 750 03212

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